DW3402
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商品详细
30V/5.1A N Channel Advanced Power MOSFET
Features
• Low RDS(on) @VGS=10V
• 3.3V Logic Level Control
• N Channel SOT23 Package
• Pb−Free, RoHS Compliant
|
V(BR)DSS |
RDS(ON) Typ |
ID Max |
|
30V |
28mΩ @10V |
5.1A |
|
34mΩ @4.5V |
Applications
• DC-to-DC converters
• Power management in battery-driven portables
• Low-side load switch and charging switch for portable devices
• Switching circuits
• High-speed line driver
Order Information
|
Product |
Package |
Marking |
Packing |
|
DW3402 |
SOT23 |
A29T |
3000PCS/Reel |
Absolute Maximum Ratings
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
|
Symbol |
Parameter |
Rating |
Unit |
|
|
Common Ratings (TA=25°C Unless Otherwise Noted) |
||||
|
VGS |
Gate-Source Voltage |
±16 |
V |
|
|
V(BR)DSS |
Drain-Source Breakdown Voltage |
30 |
V |
|
|
TJ |
Maximum Junction Temperature |
150 |
°C |
|
|
TSTG |
Storage Temperature Range |
-50 to 150 |
°C |
|
|
Mounted on Large Heat Sink |
||||
|
IDM |
Pulse Drain Current Tested① |
TA =25°C |
20.4 |
A |
|
ID |
Continuous Drain Current |
TA =25°C |
5.1 |
A |
|
TA =70°C |
4 |
|||
|
PD |
Maximum Power Dissipation |
TA =25°C |
1.5 |
W |
|
TA =70°C |
0.9 |
|||
|
Rq JA |
Thermal Resistance Junction-Ambient |
80 |
°C/W |
|
|
Symbol |
Parameter |
Condition |
Min |
Typ |
Max |
Unit |
|
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated) |
||||||
|
V(BR)DSS |
Drain-Source Breakdown Voltage |
VGS=0V ID=250μA |
30 |
-- |
-- |
V |
|
IDSS |
Zero Gate Voltage Drain Current(TA=25℃) |
VDS=30V, VGS=0V |
-- |
-- |
1 |
μA |
|
Zero Gate Voltage Drain Current(TA=125℃) |
VDS=24V, VGS=0V |
-- |
-- |
100 |
uA |
|
|
IGSS |
Gate-Body Leakage Current |
VGS=±16V, VDS=0V |
-- |
-- |
±100 |
nA |
|
VGS(TH) |
Gate Threshold Voltage |
VDS=VGS, ID=250μA |
0.5 |
0.8 |
1.2 |
V |
|
RDS(ON) |
Drain-Source On-State Resistance② |
VGS=10V, ID=4A |
-- |
28 |
36 |
mΩ |
|
RDS(ON) |
Drain-Source On-State Resistance② |
VGS=4.5V, ID=3A |
-- |
34 |
50 |
mΩ |
|
RDS(ON) |
Drain-Source On-State Resistance② |
VGS=3.3V, ID=2A |
-- |
40 |
60 |
mΩ |
|
RDS(ON) |
Drain-Source On-State Resistance② |
VGS=2.5V, ID=1A |
-- |
55 |
80 |
mΩ |
|
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated) |
||||||
|
Ciss |
Input Capacitance |
VDS=15V, VGS=0V, f=1MHz |
-- |
240 |
-- |
pF |
|
Coss |
Output Capacitance |
-- |
35 |
-- |
pF |
|
|
Crss |
Reverse Transfer Capacitance |
-- |
30 |
-- |
pF |
|
|
Qg |
Total Gate Charge |
VDS=15V ID=4A, VGS=4.5V |
-- |
3.1 |
-- |
nC |
|
Qgs |
Gate Source Charge |
-- |
0.4 |
-- |
nC |
|
|
Qgd |
Gate Drain Charge |
-- |
1.3 |
-- |
nC |
|
|
Switching Characteristics |
||||||
|
td(on) |
Turn on Delay Time |
VDD=15V, ID=1A, RG=3.3Ω, VGS=10V |
-- |
4.4 |
-- |
ns |
|
tr |
Turn on Rise Time |
-- |
2.6 |
-- |
ns |
|
|
td(off) |
Turn Off Delay Time |
- |
25.5 |
-- |
ns |
|
|
tf |
Turn Off Fall Time |
-- |
3.3 |
-- |
ns |
|
|
Source Drain Diode Characteristics |
||||||
|
ISD |
Source drain current(Body Diode) |
TA=25℃ |
-- |
-- |
1.8 |
A |
|
VSD |
Forward on voltage② |
Tj=25℃, ISD=4A, VGS=0V |
-- |
0.85 |
1.2 |
V |
